KBU8M

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 1KV 8A KBU

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 1KV 8A KBU

Technical Specifications

Parameters and characteristics for this part

Specification	KBU8M

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 çA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	KBU, 4-SIP
Supplier Device Package	KBU
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Current - Average Rectified (Io)	Mounting Type	Package / Case	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Diode Type	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor KBU8A	8 A	Through Hole	4-SIP KBU	KBU	50 V	-55 °C	150 °C	Standard	Single Phase	10 µA
GeneSiC Semiconductor KBU8M	8 A	Through Hole	4-SIP KBU	KBU	1000 V	-55 °C	150 °C	Standard	Single Phase	10 çA
GeneSiC Semiconductor KBU8D	8 A	Through Hole	4-SIP KBU	KBU	200 V	-55 °C	150 °C	Standard	Single Phase	10 µA
GeneSiC Semiconductor KBU8B	8 A	Through Hole	4-SIP KBU	KBU	100 V	-55 °C	150 °C	Standard	Single Phase	10 µA
GeneSiC Semiconductor KBU8J	8 A	Through Hole	4-SIP KBU	KBU	600 V	-55 °C	150 °C	Standard	Single Phase	10 µA
GeneSiC Semiconductor KBU8K	8 A	Through Hole	4-SIP KBU	KBU	800 V	-55 °C	150 °C	Standard	Single Phase	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole KBU

Technical documentation and resources