2SD1963T100R

NRND

Rohm Semiconductor

TRANS NPN 20V 3A MPT3

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NRND

Rohm Semiconductor

TRANS NPN 20V 3A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1963T100R

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	450 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Rohm Semiconductor 2SD1963T100S	150 °C	500 nA	2 W	3 A	20 V	TO-243AA	450 mV	150 MHz	Surface Mount	NPN	270
Rohm Semiconductor 2SD1963T100R	150 °C	500 nA	2 W	3 A	20 V	TO-243AA	450 mV	150 MHz	Surface Mount	NPN	180 hFE

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General part information

Bipolar (BJT) Transistor NPN 20 V 3 A 150MHz 2 W Surface Mount MPT3

Technical documentation and resources