MT53E384M32D2FW-046 AAT:E

Obsolete

Micron Technology Inc.

IC DRAM 12GBIT PAR 200TFBGA

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MT53E384M32D2FW-046 AAT:E

Obsolete

Micron Technology Inc.

IC DRAM 12GBIT PAR 200TFBGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E384M32D2FW-046 AAT:E

Clock Frequency	1066 MHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	384 M
Memory Size	12 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Supplier Device Package	200-TFBGA
Supplier Device Package [x]	10
Supplier Device Package [y]	14.5
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E384 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Memory Type	Package / Case	Clock Frequency	Technology	Memory Size	Memory Organization	Voltage - Supply	Memory Format	Mounting Type	Qualification	Grade	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package [y]	Supplier Device Package [x]	Write Cycle Time - Word, Page
Micron Technology Inc. MT53E384M32D2DS-053 WT:E TR	-30 °C	85 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	1866 MHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount
Micron Technology Inc. MT53E384M32D2DS-053 WT:E	-30 °C	85 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	1866 MHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount
Micron Technology Inc. MT53E384M32D2DS-053 AUT:E TR	-40 °C	125 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	1866 MHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount	AEC-Q100	Automotive
Micron Technology Inc. MT53E384M32D2DS-046 AIT:E	-40 °C	95 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	2.133 GHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount	AEC-Q100	Automotive
Micron Technology Inc. MT53E384M32D2FW-046 AAT:E	-40 °C	105 °C	200-TFBGA	Volatile	200-TFBGA	1066 MHz	SDRAM - Mobile LPDDR4X	12 Gbit	384 M		DRAM	Surface Mount			Parallel	1.06 V	1.17 V	14.5	10	18 ns
Micron Technology Inc. MT53E384M32D2FW-046 AIT:E	-40 °C	95 °C	200-TFBGA	Volatile	200-TFBGA	2.133 GHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M		DRAM	Surface Mount			Parallel	1.06 V	1.17 V	14.5	10	18 ns
Micron Technology Inc. MT53E384M32D2DS-046 AAT:E	-40 °C	105 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	2.133 GHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount	AEC-Q100	Automotive
Micron Technology Inc. MT53E384M32D2FW-046 AAT:E TR	-40 °C	105 °C	200-TFBGA	Volatile	200-TFBGA	1066 MHz	SDRAM - Mobile LPDDR4X	12 Gbit	384 M		DRAM	Surface Mount			Parallel	1.06 V	1.17 V	14.5	10	18 ns
Micron Technology Inc. MT53E384M32D2FW-046 IT:E	-40 °C	95 °C	200-TFBGA	Volatile	200-TFBGA	2.133 GHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M		DRAM	Surface Mount			Parallel	1.06 V	1.17 V	14.5	10	18 ns
Micron Technology Inc. MT53E384M32D2DS-053 AAT:E TR	-40 °C	105 °C	200-WFBGA (10x14.5)	Volatile	200-WFBGA	1866 MHz	SDRAM - Mobile LPDDR4	12 Gbit	384 M	1.1 V	DRAM	Surface Mount	AEC-Q100	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MT53E384 Series

SDRAM - Mobile LPDDR4X Memory IC 12Gbit Parallel 1.066 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available