TK4P55DA(T6RSS-Q)

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK4P55DA(T6RSS-Q)

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	2.45 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q)	Surface Mount	4.4 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	80 W	MOSFET (Metal Oxide)	380 pF	550 V	N-Channel	30 V	DPAK	3.5 A	9 nC	2.45 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 3.5A (Ta) 80W (Tc) Surface Mount DPAK

Technical documentation and resources

No documents available