VS-1N1199A

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1199A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	3 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.35 V

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-1N1199A	Chassis Stud Mount	1.35 V	DO-203AA	DO-4	3 mA	Standard Recovery >500ns	200 mA	200 C	-65 C	50 V	Standard	DO-203AA DO-4 Stud	12 A

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General part information

Diode 50 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources