1N4531,113

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Freescale Semiconductor - NXP

DIODE GEN PURP 75V 200MA DO34

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Freescale Semiconductor - NXP

DIODE GEN PURP 75V 200MA DO34

Technical Specifications

Parameters and characteristics for this part

Specification	1N4531,113

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	25 nA
Mounting Type	Through Hole
Operating Temperature - Junction	200 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-34
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Package / Case	Speed	Speed	Current - Reverse Leakage @ Vr
Freescale Semiconductor - NXP 1N4531,133	Standard	75 V	200 °C	200 mA	DO-34	1 V	Through Hole	4 ns	4 pF	Axial DO-204AG DO-34	Any Speed	200 mA	25 nA
Freescale Semiconductor - NXP 1N4531,113	Standard	75 V	200 °C	200 mA	DO-34	1 V	Through Hole	4 ns	4 pF	Axial DO-204AG DO-34	Any Speed	200 mA	25 nA

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General part information

Diode 75 V 200mA Through Hole DO-34

Technical documentation and resources