DI035P04PT-AQ

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Diotec Semiconductor

MOSFET, POWERQFN 3X3, -40V, -35A

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Diotec Semiconductor

MOSFET, POWERQFN 3X3, -40V, -35A

Technical Specifications

Parameters and characteristics for this part

Specification	DI035P04PT-AQ

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	40 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	8-QFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Grade	Qualification
Diotec Semiconductor DI035P04PT	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	19 mOhm	40 V	4.5 V 10 V	2570 pF	Surface Mount	35 A	30 nC	40 W	8-PowerWDFN	8-QFN (3x3)	2.5 V	P-Channel
Diotec Semiconductor DI035P04PT-AQ	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	19 mOhm	40 V	4.5 V 10 V	2570 pF	Surface Mount	35 A	30 nC	40 W	8-PowerVDFN	8-QFN (3x3)	2.5 V	P-Channel	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 35A (Tc) 40W (Tc) Surface Mount 8-QFN (3x3)

Technical documentation and resources

No documents available