
71V416L12YG8
ActiveIDT, Integrated Device Technology Inc
IC SRAM 4MBIT PARALLEL 44SOJ
Deep-Dive with AI
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71V416L12YG8
ActiveIDT, Integrated Device Technology Inc
IC SRAM 4MBIT PARALLEL 44SOJ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V416L12YG8 |
|---|---|
| Access Time | 12 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 10.16 mm |
| Package / Case | 44-BSOJ |
| Package / Case | 10.16 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 12 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 67 | $ 4.48 | |
Description
General part information
71V416L Series
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
Documents
Technical documentation and resources
No documents available