GA10SICP12-263

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GeneSiC Semiconductor

TRANS SJT 1200V 25A D2PAK

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GeneSiC Semiconductor

TRANS SJT 1200V 25A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	GA10SICP12-263

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1200 V
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	170 W
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Package / Case	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type
GeneSiC Semiconductor GA10SICP12-263	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	SiC (Silicon Carbide Junction Transistor)	1200 V	170 W	TO-263-7	25 A	175 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 25.27

General part information

1200 V 25A (Tc) 170W (Tc) Surface Mount TO-263-7

Technical documentation and resources