VS-20ATS08-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 20A TO220-3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 20A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VS-20ATS08-M3

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-20ATS08-M3	TO-220-3	TO-220-3	Through Hole	1.1 V	Standard	800 V	100 µA	Standard Recovery >500ns	200 mA	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	8000	$ 1.45
Newark	Each	2500	$ 1.55

General part information

Diode 800 V 20A Through Hole TO-220-3

Technical documentation and resources