1N5397G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO204AC

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	1N5397G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Grade	Mounting Type	Supplier Device Package	Supplier Device Package	Speed	Speed	Qualification	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology
Taiwan Semiconductor Corporation 1N5397GH	Automotive	Through Hole	DO-204AC	DO-15	Standard Recovery >500ns	200 mA	AEC-Q101	15 pF	5 µA	1.5 A	150 °C	-55 °C	600 V	1 V	Axial DO-15 DO-204AC	Standard
Taiwan Semiconductor Corporation 1N5397G		Through Hole	DO-204AC	DO-15	Standard Recovery >500ns	200 mA		15 pF	5 µA	1.5 A	150 °C	-55 °C	600 V	1 V	Axial DO-15 DO-204AC	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1.5A Through Hole DO-204AC (DO-15)

Technical documentation and resources