ES1AL RVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A SUB SMA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	ES1AL RVG

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Capacitance @ Vr, F	Speed	Technology	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation ES1AL R3G	10 pF	200 mA 500 ns	Standard	1 A	Surface Mount	5 µA	50 V	950 mV	150 °C	-55 °C	Sub SMA	DO-219AB	35 ns
Taiwan Semiconductor Corporation ES1AL RVG	10 pF	200 mA 500 ns	Standard	1 A	Surface Mount	5 µA	50 V	950 mV	150 °C	-55 °C	Sub SMA	DO-219AB	35 ns
Taiwan Semiconductor Corporation ES1AL M2G	10 pF	200 mA 500 ns	Standard	1 A	Surface Mount	5 µA	50 V	950 mV	150 °C	-55 °C	Sub SMA	DO-219AB	35 ns
Taiwan Semiconductor Corporation ES1A M2G	16 pF	200 mA 500 ns	Standard	1 A	Surface Mount	5 µA	50 V	950 mV	150 °C	-55 °C	DO-214AC (SMA)	DO-214AC SMA	35 ns

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General part information

Diode 50 V 1A Surface Mount Sub SMA

Technical documentation and resources