MT53E2G32D4DE-046 WT:A

Obsolete

Micron Technology Inc.

IC DRAM 64GBIT PAR 200TFBGA

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MT53E2G32D4DE-046 WT:A

Obsolete

Micron Technology Inc.

IC DRAM 64GBIT PAR 200TFBGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E2G32D4DE-046 WT:A

Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	2 G
Memory Size	64 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Package / Case	200-TFBGA
Supplier Device Package	200-TFBGA
Supplier Device Package [x]	10
Supplier Device Package [y]	14.5
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E2G32 Series

Part	Grade	Technology	Voltage - Supply	Memory Organization	Memory Format	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Clock Frequency	Qualification	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Mounting Type	Memory Interface	Package / Case
Micron Technology Inc. MT53E2G32D4DT-046 AAT:A	Automotive	SDRAM - Mobile LPDDR4	1.1 V	2 G	DRAM	64 Gbit	105 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile
Micron Technology Inc. MT53E2G32D4DE-046 AIT:A TR	Automotive	SDRAM - Mobile LPDDR4X		2 G	DRAM	64 Gbit	95 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile	1.06 V	1.17 V	18 ns	14.5	10	200-TFBGA	Surface Mount	Parallel	200-TFBGA
Micron Technology Inc. MT53E2G32D4DT-046 AIT:A TR	Automotive	SDRAM - Mobile LPDDR4	1.1 V	2 G	DRAM	64 Gbit	95 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile
Micron Technology Inc. MT53E2G32D4DE-046 WT:C TR		SDRAM - Mobile LPDDR4X		2 G	DRAM	64 Gbit	85 °C	-25 °C	2.133 GHz		Volatile	1.06 V	1.17 V	18 ns	14.5	10	200-TFBGA	Surface Mount	Parallel	200-TFBGA
Micron Technology Inc. MT53E2G32D4DT-046 WT:A		SDRAM - Mobile LPDDR4	1.1 V	2 G	DRAM	64 Gbit	85 °C	-30 °C	2.133 GHz		Volatile
Micron Technology Inc. MT53E2G32D4DE-046 WT:A		SDRAM - Mobile LPDDR4X		2 G	DRAM	64 Gbit	85 °C	-25 °C	2.133 GHz		Volatile	1.06 V	1.17 V	18 ns	14.5	10	200-TFBGA	Surface Mount	Parallel	200-TFBGA
Micron Technology Inc. MT53E2G32D4DT-046 AAT:A TR	Automotive	SDRAM - Mobile LPDDR4	1.1 V	2 G	DRAM	64 Gbit	105 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile
Micron Technology Inc. MT53E2G32D4DE-046 AIT:C TR	Automotive	SDRAM - Mobile LPDDR4X		2 G	DRAM	64 Gbit	95 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile	1.06 V	1.17 V	18 ns	14.5	10	200-TFBGA	Surface Mount	Parallel	200-TFBGA
Micron Technology Inc. MT53E2G32D4DE-046 AAT:C TR	Automotive	SDRAM - Mobile LPDDR4X		2 G	DRAM	64 Gbit	105 °C	-40 °C	2.133 GHz	AEC-Q100	Volatile	1.06 V	1.17 V	18 ns	14.5	10	200-TFBGA	Surface Mount	Parallel	200-TFBGA
Micron Technology Inc. MT53E2G32D8QD-046 WT:E		SDRAM - Mobile LPDDR4	1.1 V	2 G	DRAM	64 Gbit	85 °C	-30 °C	2.133 GHz		Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MT53E2G32 Series

SDRAM - Mobile LPDDR4X Memory IC 64Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available