IS62WV51216EBLL-45BLI

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ISSI, Integrated Silicon Solution Inc

SRAM, ASYNCHRONOUS SRAM, LPSRAM, 8 MBIT, 512K X 16BIT, MINI BGA, 48 PINS, 2.2 V

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DocumentsTechnical Data Sheet EN

IS62WV51216EBLL-45BLI

Active

ISSI, Integrated Silicon Solution Inc

SRAM, ASYNCHRONOUS SRAM, LPSRAM, 8 MBIT, 512K X 16BIT, MINI BGA, 48 PINS, 2.2 V

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IS62WV51216EBLL-45BLI

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	1024 KB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	48-VFBGA
Supplier Device Package	48-VFBGA (6x8)
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

IS62WV51216 Series

Part	Memory Organization	Memory Type	Memory Format	Package / Case	Mounting Type	Supplier Device Package	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Technology	Package / Case [y]	Package / Case [y]	Package / Case	Package / Case
ISSI, Integrated Silicon Solution Inc IS62WV51216EFBLL-45BLI	512 K	Volatile	SRAM	48-VFBGA	Surface Mount	48-VFBGA (6x8)	55 ns	55 ns	Parallel	2.2 V	3.6 V	45 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous
ISSI, Integrated Silicon Solution Inc IS62WV51216GBLL-45TLI-TR	512 K	Volatile	SRAM	48-TFSOP	Surface Mount	48-TSOP I	45 ns	45 ns	Parallel	2.2 V	3.6 V	45 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous	18.4 mm	0.724 in
ISSI, Integrated Silicon Solution Inc IS62WV51216BLL-55TLI-TR	512 K	Volatile	SRAM	44-TSOP	Surface Mount	44-TSOP II	55 ns	55 ns	Parallel	2.5 V	3.6 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous			10.16 mm	10.16 mm
ISSI, Integrated Silicon Solution Inc IS62WV51216EALL-55BLI-TR	512 K	Volatile	SRAM	48-VFBGA	Surface Mount	48-VFBGA (6x8)	55 ns	55 ns	Parallel	1.65 V	2.2 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous
ISSI, Integrated Silicon Solution Inc IS62WV51216EBLL-45BLI	512 K	Volatile	SRAM	48-VFBGA	Surface Mount	48-VFBGA (6x8)	45 ns	45 ns	Parallel	2.2 V	3.6 V	45 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous
ISSI, Integrated Silicon Solution Inc IS62WV51216EALL-55BLI	512 K	Volatile	SRAM	48-VFBGA	Surface Mount	48-VFBGA (6x8)	55 ns	55 ns	Parallel	1.65 V	2.2 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous
ISSI, Integrated Silicon Solution Inc IS62WV51216GBLL-45TLI	512 K	Volatile	SRAM	48-TFSOP	Surface Mount	48-TSOP I	45 ns	45 ns	Parallel	2.2 V	3.6 V	45 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous	18.4 mm	0.724 in
ISSI, Integrated Silicon Solution Inc IS62WV51216EALL-55TLI-TR	512 K	Volatile	SRAM	44-TSOP	Surface Mount	44-TSOP II	55 ns	55 ns	Parallel	1.65 V	2.2 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous			10.16 mm	10.16 mm
ISSI, Integrated Silicon Solution Inc IS62WV51216BLL-55TLI	512 K	Volatile	SRAM	44-TSOP	Surface Mount	44-TSOP II	55 ns	55 ns	Parallel	2.5 V	3.6 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous			10.16 mm	10.16 mm
ISSI, Integrated Silicon Solution Inc IS62WV51216EALL-55TLI	512 K	Volatile	SRAM	44-TSOP	Surface Mount	44-TSOP II	55 ns	55 ns	Parallel	1.65 V	2.2 V	55 ns	85 °C	-40 °C	1024 KB	SRAM - Asynchronous			10.16 mm	10.16 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 4.23
		10	$ 3.86
		25	$ 3.79
		40	$ 3.76
		80	$ 3.71

Description

General part information

IS62WV51216 Series

IS62WV51216EBLL-45BLI is a 512Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 8Mbit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When active-low CS1 is HIGH (deselected) or when CS2 is low (deselected) or when active-low CS1 is low, CS2 is high and both active-low LB and active-low UB and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet