TJ60S04M3L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ60S04M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	6510 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TJ60S04M3L(T6L1,NQ	MOSFET (Metal Oxide)	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	DPAK+	6 V 10 V	60 A	6510 pF	90 W	Surface Mount	P-Channel	40 V	125 nC	-20 V	10 V	6.3 mOhm
Toshiba Semiconductor and Storage TJ60S04M3L,LXHQ	MOSFET (Metal Oxide)	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	DPAK+	6 V 10 V	60 A	6510 pF	90 W	Surface Mount	P-Channel	40 V	125 nC	-20 V	10 V	6.3 mOhm

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General part information

P-Channel 40 V 60A (Ta) 90W (Tc) Surface Mount DPAK+

Technical documentation and resources

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