2SA1931,Q(J

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1931,Q(J

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Frequency - Transition	Current - Collector (Ic) (Max)	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Mounting Type
Toshiba Semiconductor and Storage 2SA1931,KEHINQ(M	PNP	1 µA	TO-220-3 Full Pack	100	2 W	60 MHz	5 A	150 °C	50 V	400 mV	TO-220NIS	Through Hole
Toshiba Semiconductor and Storage 2SA1931,Q(J	PNP	1 µA	TO-220-3 Full Pack	100	2 W	60 MHz	5 A	150 °C	50 V	400 mV	TO-220NIS	Through Hole
Toshiba Semiconductor and Storage 2SA1931,NSEIKIQ(J	PNP	1 µA	TO-220-3 Full Pack	100	2 W	60 MHz	5 A	150 °C	50 V	400 mV	TO-220NIS	Through Hole
Toshiba Semiconductor and Storage 2SA1931,BOSCHQ(J	PNP	1 µA	TO-220-3 Full Pack	100	2 W	60 MHz	5 A	150 °C	50 V	400 mV	TO-220NIS	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 5 A 60MHz 2 W Through Hole TO-220NIS

Technical documentation and resources