PJQ5448_R2_00001

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5448_R2_00001

Current - Continuous Drain (Id) @ 25°C	50 A, 9.6 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	54 W
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Grade
Panjit International Inc. PJQ5448_R2_00001	11 mOhm	40 V	10 nC	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	-55 °C	150 °C	9.6 A 50 A	54 W	2 W	2.5 V	1040 pF	DFN5060-8	20 V	N-Channel	4.5 V 10 V
Panjit International Inc. PJQ5448-AU_R2_000A1	11 mOhm	40 V	10 nC	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	-55 °C	175 ░C	9.6 A 50 A		2.4 W 65.2 W	2.5 V	1040 pF	DFN5060-8	20 V	N-Channel	4.5 V 10 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 9.6A (Ta), 50A (Tc) 2W (Ta), 54W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available