PJMB390N65EC_R2_00601

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Panjit International Inc.

650V/ 390MOHM / 10A/ EASY TO DRI

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Active

Panjit International Inc.

650V/ 390MOHM / 10A/ EASY TO DRI

Technical Specifications

Parameters and characteristics for this part

Specification	PJMB390N65EC_R2_00601

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	726 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	87.5 W
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJMB390N65EC_R2_00601	4 V	10 A	87.5 W	-55 °C	150 °C	19 nC	650 V	30 V	390 mOhm	TO-263	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	726 pF	N-Channel	MOSFET (Metal Oxide)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 10A (Tc) 87.5W (Tc) Surface Mount TO-263

Technical documentation and resources