2SA1244-Y(Q)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1244-Y(Q)

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1 V
DC Current Gain (hFE) (Min) @ Ic, Vce	1 A
DC Current Gain (hFE) (Min) @ Ic, Vce	120 hFE
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1 W
Supplier Device Package	PW-MOLD
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max)	Transistor Type	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SA1244-Y(Q)	5 A	PNP	PW-MOLD	IPAK TO-251-3 Short Leads TO-251AA	400 mV	1 W	150 °C	50 V	1 V	1 A	120 hFE	60 MHz	Surface Mount	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 5 A 60MHz 1 W Surface Mount PW-MOLD

Technical documentation and resources

No documents available