RTF020P02TL

NRND

Rohm Semiconductor

MOSFET P-CH 20V 2A TUMT3

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NRND

Rohm Semiconductor

MOSFET P-CH 20V 2A TUMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RTF020P02TL

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	640 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TUMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology
Rohm Semiconductor RTF020P02TL	150 °C	85 mOhm	2.5 V 4.5 V	12 V	Surface Mount	20 V	640 pF	2 A	2 V	TUMT3	7 nC	P-Channel	MOSFET (Metal Oxide)

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General part information

P-Channel 20 V 2A (Ta) 800mW (Ta) Surface Mount TUMT3

Technical documentation and resources

No documents available