PN2222A PBFREE

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Central Semiconductor Corp

TRANS GP BJT NPN 40V 0.8A 625MW 3-PIN TO-92 BOX

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Central Semiconductor Corp

TRANS GP BJT NPN 40V 0.8A 625MW 3-PIN TO-92 BOX

Technical Specifications

Parameters and characteristics for this part

Specification	PN2222A PBFREE

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp PN2222A PBFREE	40 V	800 mA	0.01 µA	NPN	1 V	TO-226-3 TO-92-3	300 MHz	625 mW	150 °C	-65 °C	TO-92-3	Through Hole	100

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General part information

Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 625 mW Through Hole TO-92-3

Technical documentation and resources