2SD1312(0)-T-AZ

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

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2SD1312(0)-T-AZ

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1312(0)-T-AZ

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	3-SSIP
Power - Max [Max]	1 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

2SD1312 Series

Bipolar Power Transistors

Part	Package / Case	Power - Max [Max]	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type
Renesas Electronics Corporation 2SD1312(0)-T-AZ	3-SSIP	1 W	NPN	120 MHz	80 V	135	150 °C	1 A	500 mV	100 nA	Through Hole
Renesas Electronics Corporation 2SD1312-AZ	3-SSIP	1 W	NPN	120 MHz	80 V	135	150 °C	1 A	500 mV	100 nA	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	650	$ 0.46

Description

General part information

2SD1312 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

No documents available