MBR10H150FCT_T0_00001

Active

Panjit International Inc.

ULTRA LOW IR SCHOTTKY BARRIER RE

Search across all available documentation for this part.

Active

Panjit International Inc.

ULTRA LOW IR SCHOTTKY BARRIER RE

Technical Specifications

Parameters and characteristics for this part

Specification	MBR10H150FCT_T0_00001

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3 Full Pack
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	850 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Diode Configuration	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)
Panjit International Inc. MBR10H150FCT_T0_00001	175 ░C	-55 C	TO-220-3 Full Pack	Schottky	200 mA 500 ns	Through Hole	500 nA	1 Pair Common Cathode	ITO-220AB	850 mV	5 A
Panjit International Inc. MBR10H150CT_T0_00001	175 ░C	-55 C	TO-220-3	Schottky	200 mA 500 ns	Through Hole	500 nA	1 Pair Common Cathode	TO-220AB	850 mV	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 150 V 5A Through Hole TO-220-3 Full Pack

Technical documentation and resources

No documents available