RZY200P01TL

Obsolete

Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

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Obsolete

Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RZY200P01TL

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	20 W
Supplier Device Package	TCPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Part	FET Type	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)
Rohm Semiconductor RZY200P01TL	P-Channel	Surface Mount	20 W	TCPT3	150 °C	20 A	MOSFET (Metal Oxide)	10 V	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 20A (Ta) 20W (Tc) Surface Mount TCPT3

Technical documentation and resources

No documents available