RN2109,LF(CT

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN2109,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	SSM
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage RN2109,LF(CT	300 mV	Surface Mount	PNP - Pre-Biased	100 mA	47 kOhms	SC-75 SOT-416	SSM	50 V	200 MHz	22 kOhms	70	500 nA	100 mW
Toshiba Semiconductor and Storage RN2109ACT(TPL3)	150 mV	Surface Mount	PNP - Pre-Biased	80 mA	47 kOhms	SC-101 SOT-883	CST3	50 V		22 kOhms	70	500 nA	100 mW
Toshiba Semiconductor and Storage RN2109MFV,L3F	300 mV	Surface Mount	PNP - Pre-Biased	100 mA	47 kOhms	SOT-723	VESM	50 V		22 kOhms	70	500 nA	150 mW

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

Technical documentation and resources