Zenode.ai Logo
Beta
K
1N5407GH - DO-201

1N5407GH

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO201AD

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
1N5407GH - DO-201

1N5407GH

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO201AD

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1N5407GH
Capacitance @ Vr, F25 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-201AD, Axial
QualificationAEC-Q101
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.29
100$ 0.18
500$ 0.16
Tape & Reel (TR) 1250$ 0.11
2500$ 0.10
6250$ 0.10
12500$ 0.09
31250$ 0.09
62500$ 0.08

Description

General part information

1N5407 Series

Diode 800 V 3A Through Hole DO-201AD

Documents

Technical documentation and resources