ZTX956STZ

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 200V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, TO-92 COMPATIBLE, E-LINE PACKAGE-3

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 200V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX956STZ

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	110 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3, Formed Leads
Power - Max [Max]	1.58 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]
Diodes Inc ZTX956STZ	E-Line-3 Formed Leads	250 mV	PNP	100 hFE	1.58 W	200 V	Through Hole	50 nA	E-Line (TO-92 compatible)	-55 °C	200 C	110 MHz	2 A
Diodes Inc ZTX956STOA	E-Line-3 Formed Leads	250 mV	PNP	100 hFE	1.58 W	200 V	Through Hole	50 nA	E-Line (TO-92 compatible)	-55 °C	200 C	110 MHz	2 A

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General part information

Bipolar (BJT) Transistor PNP 200 V 2 A 110MHz 1.58 W Through Hole E-Line (TO-92 compatible)