SI6953DQ

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ON Semiconductor

MOSFET 2P-CH 20V 1.9A 8TSSOP

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ON Semiconductor

MOSFET 2P-CH 20V 1.9A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6953DQ

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	218 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	600 mW
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [custom]	Package / Case [custom]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor SI6953DQ	8-TSSOP	1.9 A	8-TSSOP	0.173 "	4.4 mm	600 mW	170 mOhm	3 V	-55 °C	150 °C	2 P-Channel	10 nC	20 V	MOSFET (Metal Oxide)	Surface Mount	218 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	919	$ 0.33

General part information

Mosfet Array 20V 1.9A (Ta) 600mW (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available