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70T3319S133BF - 70T3319 - Block Diagram

70T3319S133BF

Obsolete
Renesas Electronics Corporation

256K X 18 SYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

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70T3319S133BF - 70T3319 - Block Diagram

70T3319S133BF

Obsolete
Renesas Electronics Corporation

256K X 18 SYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

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Technical Specifications

Parameters and characteristics for this part

Specification70T3319S133BF
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 18
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case208-LFBGA
Supplier Device Package208-CABGA (15x15)
TechnologySRAM - Dual Port, Synchronous
Voltage - Supply [Max]2.6 V
Voltage - Supply [Min]2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

70T3319 Series

The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

Documents

Technical documentation and resources