PJS6603_S2_00001

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Panjit International Inc.

30V COMPLEMENTARY ENHANCEMENT MO

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Panjit International Inc.

30V COMPLEMENTARY ENHANCEMENT MO

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6603_S2_00001

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	4.4 A, 2.9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	9.8 nC, 5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF, 396 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	110 mOhm, 48 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Panjit International Inc. PJS6603_S2_00001	MOSFET (Metal Oxide)	48 mOhm 110 mOhm	30 V	Surface Mount	235 pF 396 pF	SOT-23-6	N and P-Channel Complementary	2.9 A 4.4 A	1.25 W	2.1 V	-55 °C	150 °C	5.8 nC 9.8 nC	SOT-23-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 4.4A (Ta), 2.9A (Ta) 1.25W (Ta) Surface Mount SOT-23-6

Technical documentation and resources