2SC5201,T6MURAF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 600V 0.05A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 600V 0.05A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5201,T6MURAF(J

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SC5201(T6MURATAFM	150 °C	TO-226-3 TO-92-3 Long Body	600 V	100	1 V	900 mW	Through Hole	TO-92MOD	50 mA	NPN	1 µA
Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J	150 °C	TO-226-3 TO-92-3 Long Body	600 V	100	1 V	900 mW	Through Hole	TO-92MOD	50 mA	NPN	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 600 V 50 mA 900 mW Through Hole TO-92MOD

Technical documentation and resources