W6672TE350

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IXYS

DIODE STD 1900V 6672A TO200AF

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IXYS

DIODE STD 1900V 6672A TO200AF

Technical Specifications

Parameters and characteristics for this part

Specification	W6672TE350

Current - Average Rectified (Io)	6672 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-200AF
Reverse Recovery Time (trr)	52 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-200AF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1900 V
Voltage - Forward (Vf) (Max) @ If	1.37 V

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Speed	Package / Case
IXYS W6672TE320	6672 A	1750 V	1.37 V	52 µs	TO-200AF	Chassis Mount	100 mA	Standard	-40 °C	160 °C	Standard Recovery >500ns	200 mA	TO-200AF
IXYS W6672TE350	6672 A	1900 V	1.37 V	52 µs	TO-200AF	Chassis Mount	100 mA	Standard	-40 °C	160 °C	Standard Recovery >500ns	200 mA	TO-200AF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1900 V 6672A Chassis Mount TO-200AF

Technical documentation and resources