1N4153_T50R

Obsolete

ON Semiconductor

DIODE GEN PURP 75V 200MA DO35

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Obsolete

ON Semiconductor

DIODE GEN PURP 75V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N4153_T50R

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Package / Case	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)
ON Semiconductor 1N4153_T50R	4 ns	2 pF	Axial DO-204AH DO-35	DO-35	Through Hole	880 mV	Any Speed	200 mA	50 nA	Standard	75 V	175 °C	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 75 V 200mA Through Hole DO-35

Technical documentation and resources