MBR400100CT

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GeneSiC Semiconductor

DIODE MOD SCHOT 100V 200A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOT 100V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR400100CT

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Mounting Type	Diode Configuration
GeneSiC Semiconductor MBR400100CT	5 mA	200 mA 500 ns	200 A	Twin Tower	100 V	150 °C	-55 °C	Twin Tower	Schottky	Chassis Mount	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 100 V 200A Chassis Mount Twin Tower

Technical documentation and resources