
VS-20ETF12THM3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO220AC
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

VS-20ETF12THM3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO220AC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-20ETF12THM3 |
|---|---|
| Current - Reverse Leakage @ Vr | 100 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 400 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.85 | |
| 50 | $ 2.29 | |||
| 100 | $ 1.88 | |||
| 500 | $ 1.59 | |||
| 1000 | $ 1.35 | |||
| 2000 | $ 1.28 | |||
| 5000 | $ 1.24 | |||
Description
General part information
20ETF12 Series
Diode 1200 V 20A Through Hole TO-220AC
Documents
Technical documentation and resources