
MBR2X080A100
ActiveGeneSiC Semiconductor
100V 2 INDEPENDENT 840MV@80A SOT-227 SCHOTTKY DIODES ROHS
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MBR2X080A100
ActiveGeneSiC Semiconductor
100V 2 INDEPENDENT 840MV@80A SOT-227 SCHOTTKY DIODES ROHS
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR2X080A100 |
|---|---|
| Current - Average Rectified (Io) (per Diode) [custom] | 80 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Diode Configuration | 2 Independent |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | SOT-227 |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MBR2X080 Series
Diode Array 2 Independent 100 V 80A Chassis Mount SOT-227-4, miniBLOC
Documents
Technical documentation and resources