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MBR2X080A100 - MBR2X

MBR2X080A100

Active
GeneSiC Semiconductor

100V 2 INDEPENDENT 840MV@80A SOT-227 SCHOTTKY DIODES ROHS

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MBR2X080A100 - MBR2X

MBR2X080A100

Active
GeneSiC Semiconductor

100V 2 INDEPENDENT 840MV@80A SOT-227 SCHOTTKY DIODES ROHS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMBR2X080A100
Current - Average Rectified (Io) (per Diode) [custom]80 A
Current - Reverse Leakage @ Vr1 mA
Diode Configuration2 Independent
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseSOT-227-4, miniBLOC
Speed200 mA, 500 ns
Supplier Device PackageSOT-227
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If840 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 156$ 40.55
LCSCPiece 1$ 112.45
208$ 44.87
520$ 43.37
988$ 42.63

Description

General part information

MBR2X080 Series

Diode Array 2 Independent 100 V 80A Chassis Mount SOT-227-4, miniBLOC

Documents

Technical documentation and resources