SGS13N60UFDTU

Obsolete

ON Semiconductor

IGBT, 13A, 600V, N-CHANNEL

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Obsolete

ON Semiconductor

IGBT, 13A, 600V, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	SGS13N60UFDTU

Current - Collector Pulsed (Icm)	52 A
Gate Charge	25 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	45 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-220F-3
Switching Energy	95 µJ, 85 µJ
Td (on/off) @ 25°C	70 ns, 20 ns
Test Condition	6.5 A, 50 Ohm, 15 V, 300 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Gate Charge	Current - Collector Pulsed (Icm)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Mounting Type	Supplier Device Package	Test Condition	Reverse Recovery Time (trr)	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor SGS13N60UFDTU	TO-220-3 Full Pack	25 nC	52 A	45 W	2.6 V	600 V	20 ns 70 ns	Through Hole	TO-220F-3	6.5 A 15 V 50 Ohm 300 V	55 ns	85 µJ 95 µJ	-55 °C	150 °C
ON Semiconductor SGS13N60UFDTU	TO-220-3 Full Pack	25 nC	52 A	45 W	2.6 V	600 V	20 ns 70 ns	Through Hole	TO-220F-3	6.5 A 15 V 50 Ohm 300 V	55 ns	85 µJ 95 µJ	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 13 A 45 W Through Hole TO-220F-3

Technical documentation and resources