JAN1N6631U

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Microsemi Corporation

DIODE GEN PURP 1KV 1.4A D-5B

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Microsemi Corporation

DIODE GEN PURP 1KV 1.4A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6631U

Current - Average Rectified (Io)	1.4 A
Current - Reverse Leakage @ Vr	4 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Qualification	Mounting Type	Speed	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]
Microsemi Corporation JAN1N6631U	150 °C	-65 C	Military	60 ns	1.6 V	Standard	MIL-PRF-19500/590	Surface Mount	200 mA 500 ns	E SQ-MELF	1.4 A	D-5B	4 µA	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 16.63

General part information

Diode 1000 V 1.4A Surface Mount D-5B

Technical documentation and resources