2SA2195,LF

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Toshiba Semiconductor and Storage

TRANS PNP 50V 1.7A UFM

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Toshiba Semiconductor and Storage

TRANS PNP 50V 1.7A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	2SA2195,LF

Current - Collector (Ic) (Max) [Max]	1.7 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	500 mW
Supplier Device Package	UFM
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Toshiba Semiconductor and Storage 2SA2195,LF	50 V	1.7 A	100 nA	150 °C	UFM	PNP	200 mV	Surface Mount	200	500 mW

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General part information

Bipolar (BJT) Transistor PNP 50 V 1.7 A 500 mW Surface Mount UFM

Technical documentation and resources