JANTXV1N6626U

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Microsemi Corporation

DIODE GEN PURP 200V 1.75A D-5B

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Microsemi Corporation

DIODE GEN PURP 200V 1.75A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV1N6626U

Current - Average Rectified (Io)	1.75 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Speed	Qualification	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology
Microsemi Corporation JANTXV1N6626U	E SQ-MELF	200 V	Surface Mount	D-5B	200 mA 500 ns	MIL-PRF-19500/590	2 µA	30 ns	Military	150 °C	-65 C	1.75 A	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 21.50

General part information

Diode 200 V 1.75A Surface Mount D-5B

Technical documentation and resources

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