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RTQ020N03TR - ONSEMI NCV213RSQT2G

RTQ020N03TR

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Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENTransistor, MOSFET Flammability+2
RTQ020N03TR - ONSEMI NCV213RSQT2G

RTQ020N03TR

Active
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

Deep-Dive with AI

DocumentsTechnical Data Sheet ENTransistor, MOSFET Flammability+2

Technical Specifications

Parameters and characteristics for this part

SpecificationRTQ020N03TR
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.3 nC
Input Capacitance (Ciss) (Max) @ Vds135 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.25 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageTSMT6 (SC-95)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
Digi-Reel® 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
Tape & Reel (TR) 3000$ 0.19
6000$ 0.18
9000$ 0.17
30000$ 0.16
NewarkEach 1$ 0.82
10$ 0.52
100$ 0.34
500$ 0.26
1000$ 0.24
2500$ 0.20
10000$ 0.17

Description

General part information

RTQ020N05 Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.