UG1008GH

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	UG1008GH

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Grade	Reverse Recovery Time (trr)	Technology	Qualification	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case
Taiwan Semiconductor Corporation UG1008GH	200 mA 500 ns	10 A	1 Pair Common Cathode	Automotive	30 ns	Standard	AEC-Q101	1.7 V	150 °C	-55 °C	Through Hole	10 µA	TO-220AB	600 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	2000	$ 0.41

General part information

Diode Array 1 Pair Common Cathode 600 V 10A Through Hole TO-220-3

Technical documentation and resources

No documents available