VS-VSKE91/12

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 100A ADD-A-PAK

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 100A ADD-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKE91/12

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	ADD-A-PAK (3)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	ADD-A-PAK®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Speed	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-VSKE91/10	Standard Recovery >500ns	200 mA	100 A	150 °C	-40 °C	ADD-A-PAK (3)	Chassis Mount	10 mA	ADD-A-PAK®	1000 V	Standard
Vishay General Semiconductor - Diodes Division VS-VSKE91/12	Standard Recovery >500ns	200 mA	100 A	150 °C	-40 °C	ADD-A-PAK (3)	Chassis Mount	10 mA	ADD-A-PAK®	1.2 kV	Standard	1.55 V
Vishay General Semiconductor - Diodes Division VS-VSKE91/14	Standard Recovery >500ns	200 mA	100 A	150 °C	-40 °C	ADD-A-PAK (3)	Chassis Mount	10 mA	ADD-A-PAK®	1400 V	Standard

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General part information

Diode 1200 V 100A Chassis Mount ADD-A-PAK®

Technical documentation and resources