RP1A090ZPTR

Obsolete

Rohm Semiconductor

MOSFET P-CH 12V 9A MPT6

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

MOSFET P-CH 12V 9A MPT6

Technical Specifications

Parameters and characteristics for this part

Specification	RP1A090ZPTR

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	7400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	MPT6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor RP1A090ZPTR	1 V	P-Channel	10 V	12 mOhm	12 V	6-SMD Flat Leads	59 nC	1.5 V 4.5 V	150 °C	7400 pF	2 W	Surface Mount	MOSFET (Metal Oxide)	MPT6	9 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 9A (Ta) 2W (Ta) Surface Mount MPT6

Technical documentation and resources