2DA1213YQ-13

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Diodes Inc

TRANS PNP 50V 2A SOT89-3

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Diodes Inc

TRANS PNP 50V 2A SOT89-3

Technical Specifications

Parameters and characteristics for this part

Specification	2DA1213YQ-13

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Qualification	AEC-Q101
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PNP,50V, 2A, SOT89

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Grade	Qualification	Package / Case	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc 2DA1213YQ-13	2 A	SOT-89-3	500 mV	50 V	120 hFE	Surface Mount	PNP	100 nA	Automotive	AEC-Q101	TO-243AA	1 W	-55 °C	150 °C

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General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.