1N5831R

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V 25A DO4

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V 25A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N5831R

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed
GeneSiC Semiconductor 1N5831R	Reverse Polarity Schottky	35 V	150 °C	-55 °C	DO-4	25 A	Chassis Stud Mount	2 mA	DO-203AA DO-4 Stud	580 mV	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	500	$ 12.40

General part information

Diode 35 V 25A Chassis, Stud Mount DO-4

Technical documentation and resources