Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5194G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 hFE |
| Frequency - Transition | 2 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 40 W |
| Supplier Device Package | TO-126 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N5194 Series
The Power 4 A, 80 V Bipolar PNP Transistor is for use in power amplifier and switching circuits. It has excellent safe area limits and is complement to NPN 2N5191, 2N5192
Documents
Technical documentation and resources