MURH7060R

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GeneSiC Semiconductor

DIODE GEN PURP 600V 70A D-67

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GeneSiC Semiconductor

DIODE GEN PURP 600V 70A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MURH7060R

Current - Average Rectified (Io)	70 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D-67
Reverse Recovery Time (trr)	110 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-67
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package
GeneSiC Semiconductor MURH7060R	25 µA	Standard	Chassis Mount	1.7 V	150 °C	-55 °C	70 A	200 mA 500 ns	D-67	600 V	110 ns	D-67

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	108	$ 41.29

General part information

Diode 600 V 70A Chassis Mount D-67

Technical documentation and resources