GE17042BCA3

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GE Aerospace

SIC 2N-CH 1700V 425A MODULE

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GE Aerospace

SIC 2N-CH 1700V 425A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE17042BCA3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	425 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	1207 nC
Input Capacitance (Ciss) (Max) @ Vds	29100 pF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Package / Case	Module
Power - Max [Max]	1250 W
Rds On (Max) @ Id, Vgs	4.45 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Configuration	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id
GE Aerospace GE17042BCA3	29100 pF	Chassis Mount	Module	2 N-Channel (Dual)	Module	4.45 mOhm	1.7 kV	1700 V	1207 nC	1250 W	Silicon Carbide (SiC)	425 A	175 °C	4.5 V

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General part information

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W Chassis Mount Module

Technical documentation and resources