1N662A TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 80V 150MA DO7

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 80V 150MA DO7

Technical Specifications

Parameters and characteristics for this part

Specification	1N662A TR

Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-204AA, DO-7
Reverse Recovery Time (trr)	300 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-7
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Speed	Speed	Current - Average Rectified (Io)	Mounting Type
Central Semiconductor Corp 1N662A TR	DO-7	20 µA	80 V	200 C	-65 C	Axial DO-204AA DO-7	Standard	1 V	300 ns	Any Speed	200 mA	150 mA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 150mA Through Hole DO-7

Technical documentation and resources

No documents available